Preferred Label : phototransistor;
IUPAC acronym : FET;
IUPAC definition : A bipolar transistor with its base-collector junction acting as a photodiode, which,
if irradiated, controls the response of the device. Due to the inherent current gain
(of the transistor) the responsivity of the phototransistor is greater than that of
photodiodes. A Darlington phototransistor consists of two separate transistors coupled
in the high-impedance Darlington configuration with a phototransistor as the input
transistor. A field effect phototransistor or photo-FET is a field effect transistor
(FET) that employs photogeneration of carriers in the channel region (the neutral
region sandwiched between the insulator and the depletion region under the gate of
the FET). It is characterized by high responsivity due to the high current gain of
the FET.;
Origin ID : P04658;
Automatic exact mappings (from CISMeF team)
- See also
A bipolar transistor with its base-collector junction acting as a photodiode, which,
if irradiated, controls the response of the device. Due to the inherent current gain
(of the transistor) the responsivity of the phototransistor is greater than that of
photodiodes. A Darlington phototransistor consists of two separate transistors coupled
in the high-impedance Darlington configuration with a phototransistor as the input
transistor. A field effect phototransistor or photo-FET is a field effect transistor
(FET) that employs photogeneration of carriers in the channel region (the neutral
region sandwiched between the insulator and the depletion region under the gate of
the FET). It is characterized by high responsivity due to the high current gain of
the FET.
